Phys. Rev. B 71, 075315 (2005)
Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key parameter for these applications is the spin relaxation time. Here we apply the theory of D’yakonov and Perel’ (DP) to calculate the electron spin resonance linewidth of a silicon 2DEG due to structural inversion asymmetry for arbitrary static magnetic field direction at low temperatures. We estimate the Rashba spin-orbit coupling coefficient in silicon quantum wells and find the $T_{1}$ and $T_{2}$ times of the spins from this mechanism as a function of momentum scattering time, magnetic field, and device-specific parameters. We obtain agreement with existing data for the angular dependence of the relaxation times and show that the magnitudes are consistent with the DP mechanism. We suggest how to increase the relaxation times by appropriate device design.
Appl. Phys. Lett. v84, p4047 (2004)
We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV.
Phys. Rev. Lett. v92, p037901 (2004)
Electron spin qubits in semiconductors are attractive from the viewpoint of long coherence times. However, single spin measurement is challenging. Several promising schemes incorporate ancillary tunnel couplings that may provide unwanted channels for decoherence. Here, we propose a novel spin-charge transduction scheme, converting spin information to orbital information within a single quantum dot by microwave excitation. The same quantum dot can be used for rapid initialization, gating, and readout. We present detailed modeling of such a device in silicon to confirm its feasibility.
Phys. Rev. B, 66, 035314 (2002)
Direct phonon spin-lattice relaxation of an electron qubit bound by a donor impurity or quantum dot in SiGe heterostructures is investigated. The aim is to evaluate the importance of decoherence from this mechanism in several important solid-state quantum computer designs operating at low temperatures. We calculate the relaxation rate $1/T_1$ as a function of [100] uniaxial strain, temperature, magnetic field, and silicon/germanium content for Si:P bound electrons. The quantum dot potential is much smoother, leading to smaller splittings of the valley degeneracies. We have estimated these splittings in order to obtain upper bounds for the relaxation rate. In general, we find that the relaxation rate is strongly decreased by uniaxial compressive strain in a SiGe-Si-SiGe quantum well, making this strain an important positive design feature. Ge in high concentrations (particularly over 85%) increases the rate, making Si-rich materials preferable. We conclude that SiGe bound electron qubits must meet certain conditions to minimize decoherence but that spin-phonon relaxation does not rule out the solid-state implementation of error-tolerant quantum computing.
