Spin Readout and Initialization in a Semiconductor Quantum Dot

March 29th, 2004  |  Published in All, Papers

Spin Readout and Initialization in a Semiconductor Quantum Dot

Electron spin qubits in semiconductors are attractive from the viewpoint of long coherence times. However, single spin measurement is challenging. Several promising schemes incorporate ancillary tunnel couplings that may provide unwanted channels for decoherence. Here, we propose a novel spin-charge transduction scheme, converting spin information to orbital information within a single quantum dot by microwave excitation. The same quantum dot can be used for rapid initialization, gating, and readout. We present detailed modeling of such a device in silicon to confirm its feasibility.

Comments: Published version
Subjects: Materials Science (cond-mat.mtrl-sci); Quantum Physics (quant-ph)
Journal reference: Phys. Rev. Lett. v92, p037901 (2004)
DOI: 10.1103/PhysRevLett.92.037901
Cite as: arXiv:cond-mat/0304422v2 [cond-mat.mtrl-sci]

Leave a Response

You must be logged in to post a comment.

Tahan Research

http://research.tahan.com/

Recent Comments


    Recent Comments

      Tags

      Categories