Preprint: Bottom-up superconducting and Josephson junction devices inside a Group-IV semiconductor

September 2nd, 2013  |  Published in All, News, Preprints

…or how to make a superconducting qubit out of silicon!

We propose superconducting devices made from precision hole-doped regions within a silicon (or germanium) single crystal. We analyze the properties of this superconducting semiconductor and show that practical superconducting wires, Josephson tunnel junctions or weak links, SQUIDs, and qubits are realizable. This work motivates the pursuit of bottom-up superconductivity for improved or fundamentally different technology and physics.

 

Bottom-up superconducting and Josephson junction devices inside a Group-IV semiconductor

(Submitted on 30 Aug 2013)
A superconducting "wire" formed from a precisely hole-doped region within a single crystal. The orange is the extent of the hole wave function which extends beyond the boron doped region.

A superconducting “wire” formed from a precisely hole-doped region within a single crystal. The orange is the extent of the hole wave function which extends beyond the boron doped region.

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