Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot
(Submitted on 16 Apr 2004 (v1), last revised 20 Apr 2004 (this version, v2))
We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV.
| Comments: | Typos corrected; to appear in Appl. Phys. Lett |
| Subjects: | Materials Science (cond-mat.mtrl-sci) |
| Journal reference: | Appl. Phys. Lett. v84, p4047 (2004) |
| DOI: | 10.1063/1.1751612 |
| Cite as: | arXiv:cond-mat/0404399v2 [cond-mat.mtrl-sci] |